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2SD2568
Transistors
Power Transistor (400V, 0.5A)
2SD2568
Features 1) High breakdown voltage.(BVCEO=400V)
Absolute maximum ratings (Ta=25C)
Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 400 400 7 0.5 10 150 -55 to +150 Unit V V V A W(Tc=25C) C C
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Packaging specifications and hFE
Type Package hFE Code Basic ordering unit (pieces) 2SD2568 CPT3 PQ TL 2500
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. 400 400 7 - - - - 82 - - Typ. - - - - - - - - 13.5 8 Max. - - - 10 10 0.5 1.0 270 - - Unit V V V A A V V - MHz pF IC=50A IC=1mA IE=50A VCB=400V VEB=6V IC=100mA , IB=10mA IC=100mA , IB=10mA VCE/IC=5V/50mA VCE=5V , IE=-50mA , f=10MHz VCB=10V , IE=0A , f=1MHz Conditions
Transition frequency
Output capacitance
Rev.A
1/2
2SD2568
Transistors
Electrical characteristics curves
200
COLLECTOR CURRENT : IC (mA)
Ta=25 C
mA 3.0mA A 2.5m .0mA 2 A 1.5m
1
COLLECTOR CURRENT : IC (A)
VCE=3V
DC CURRENT GAIN : hFE
1000 500 200 100 50
Ta=25 C
0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002
Ta=100C 25C -25C
160
3.5
VCE=10V
120
1.0m
A
80
0.5m
A
5V
20 10 5 2
40
IB=0mA
0
0
2
4
6
8
10
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1 0.001 0.002 0.005 0.01 0.02
0.05 0.1 0.2
0.5
1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
Fig.1 Grounded emitter output characteristics
Fig.2 Grounded emitter propagation characteristics
Fig.3 DC current gain vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=10V
Ta=100C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V)
1000 500
10 5 2 1
Ta=25 C
10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
Ta=100 C 25 C -25 C Ta= -25 C 25 C 100 C
IC/IB=10
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
25C -25C
IC/IB=20 10
VBE(sat)
0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
5
VCE(sat)
0.5
1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
Fig.5 Collector-emitter saturation voltage vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs. collector current ( ) Base-emitter saturation voltage vs. collector current
500
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
TRANSITION FREQUENCY : fT(MHz) (V)
Ta=25 C VCE=10V
500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10
200 100 50 20 10 5 2 1
-0.001 -0.005 -0.002 -0.01 -0.02 -0.1 -0.05 -0.2
Ta=25 C f=1MHz IE=0A
20
50
EMITTER CURRENT : IE (A)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Gain bandwidth product vs. emitter current
Fig.8 Collector output capacitance vs. collector-base voltage
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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